Hongwei Qu, Ph.D.

Professor Electrical and Computer Engineering Department 430 EC; (248) 370-2205; Fax: (248) 370-4633 [email protected] secs.oakland.edu/~qu2/

Education

• Ph.D. in Electrical Engineering, University of Florida, Gainesville, Florida, 2006
• M.S. in Physics, Florida International University, Miami, Florida, 2002
• M.S. in Electrical Engineering, Tianjin University, Tianjin, China, 1993
• B.E. in Electrical Engineering, Tianjin University, Tianjin, China, 1988

Teaching

• ECE 3105: Electronic circuits and devices
• ECE 5134: Fundamentals of MEMS
• ECE 5130: Integrated devices and circuits
• ECE 3105: Advanced electronics design

Research 

• Micro-electro- mechanical systems (MEMS)
• Solid-state sensors
• CMOS-MEMS technology
• Applications of MEMS in biomedicine and security
• Nanotechnology and devices
• MEMS/NEMS modeling

Selected Publications

1. P. Qu; G. Sreenivasulu; R. Bidthanapally; V. Petrov; G. Srinivasan and H. Qu, “Fabrication and characterization of a MEMS nano-Tesla ferromagnetic-piezoelectric magnetic sensor array”, Applied Physics Letters, 108, 242412 (2016).

2. G. Sreenivasulu; P. Qu; V. Petrov; H. Qu and G. Srinivasan, “Sensitivity enhancement in magnetic sensors based on ferroelectric-bimorphs and multiferroic composites”, Sensors, 16 (2), 2016, pp. 262-274.

3. H. Qu, “CMOS-MEMS Technologies and Devices”, Micromachines, 7 (1), 2016, pp.14-32.

4. G. Sreenivasulu; P. Qu; V. Petrov; H. Qu and G. Srinivasan, “Magneto- electric interactions at bending resonance in an asymmetric multiferroic composite”, Journal of Applied Physics, 117 (17), 2015, 174105.

5. G. Sreenivasulu, P. Qu, E. Piskulich, V. Petrov, Y. Fetisov, A. Nosov, H. Qu, and G. Srinivasan, “Shear strain mediated magneto-electric effects in composites of piezoelectric lanthanum gallium silicate or tantalate and ferromagnetic alloys”, Applied Physics Letters, 105, 032409 (2014).

Professional Association

Member, IEEE